|
|
Ȩ >»óÇ°¼Ò°³ > Á¦Ç°º° ºÐ·ù > Wafer > Á¦Ç°»ó¼¼Á¤º¸ |
|
|
|
|
|
Silicon Wafer 8, 12 inch / ½Ç¸®ÄÜ ¿þÀÌÆÛ |
|
|
ÁÖ¿äƯ¡ |
|
¡á P-type, N-typeÀ¸·Î ±¸ºÐ
¡á 8ÀÎÄ¡ / 12ÀÎÄ¡·Î ±¸ºÐ (Dia Å©±â¿¡ µû¶ó µÎ²² Áõ°¡)
¡á Grade´Â Prime Grade, Test Grade, Fallout Grade·Î ±¸ºÐ
¡á LPCVD, PECVD, Sputtering ÁõÂø Wafer °ø±Þ °¡´É (º°µµ »ó´ã ¹× °ßÀû ÇÊ¿ä)
¡á SK½ÇÆ®·Ð |
|
|
|
|
|
|
|
¡Ü 8, 12ÀÎÄ¡ Dia : Dia Å©±â¿¡ µû¶ó µÎ²² Áõ°¡
¡Ü P(Positive) Type(Dopant Type)
- Impurity(ºÒ¼ø¹°) Doping À¸·Î Àü±âÀû Ư¼ºÀ» ºÎ¿©
¡¤ 3°¡ ¿ø¼Ò(B, Al, Ga) DopingÀ¸·Î Ư¼ºÀ» º¯È½ÃÅ´
¡¤ ¾ç°øÀÌ ÀüÇÏ ¿î¹ÝÀÚÀÓ
¡Ü ÀúÇ× (¥Ø) : Impurity Doping ¾çÀÌ Áõ°¡Çϸé ÀúÇ×ÀÌ ³·¾ÆÁü
¡Ü ¿þÀÌÆÛÀÇ ¹æÇ⼺ Ç¥½Ã ¹æ¹ý
- Notch
¡¤ °¡ÀåÀÚ¸®¿¡ ÀÛÀº VÀÚ ¸ð¾çÀÇ È¨À» ¸¸µå´Â °Í
¡¤ 200 mmÀÌ»ó ´ëÇü ¿þÀÌÆÛ¿¡¼ ÁÖ·Î »ç¿ë
- Flat
¡¤ ¿þÀÌÆÛÀÇ °¡ÀåÀÚ¸®¿¡ ÀÏÁ¤ ±æÀÌÀÇ ÆòÆòÇÑ ºÎºÐÀ» ¸¸µë
¡¤ Primary Flat °ú Secondary Flat ÀÇ °¢µµ¿Í ±æÀ̸¦ ÅëÇØ ¿þÀÌÆÛÀÇ Á¾·ù¿Í µµÇÎÀ¯Çü ±¸ºÐ
¡Ü Orientation : 1-0-0
- Àý´ÜÀ¸·Î °áÁ¤ Æò¸éÀ» ³ªÅ¸³¿
- ÃÖ±Ù¿¡´Â Àý´Ü º¸´Ù´Â Ç¥½Ã·Î °áÁ¤ Æò¸éÀ» ³ªÅ¸³¿
- ÀÌ¿Â ÁÖÀÔ ¹æÇâÀ» ¼±ÅÃ
¡Ü Thermal Oxidation (»êȸ·)
- °í¿Â¿¡¼ Silicon Wafer ¸¦ »êȽÃÄÑ SiO2 Àý¿¬¸·À» ¼ºÀå½ÃÅ°´Â °øÁ¤
- ÀåÁ¡ : º¸È£¸·(Surface Passivation), ºÒ¼ø¹° Á¦°Å(Surface Cleaning), ¼ÒÀÚ°£ °Ý¸®(Isolation)
¡Ü Grade
- Prime Grade : Á¦Ç° ¾ç»ê¿ë, High Quality / High Cost
- Test Grade : ¹æºñ À¯Áö °ü¸® ¹× ¿£Áö´Ï¾î ½ÇÇè µî, High Quality
- Fallout Grade : ½ÇÇèÀ̳ª ±³À°¸ñÀû µî
¡Ü Ư¼ö»ç¾ç Wafer °øÁ¤
- LPCVD (Low Pressure Chemical Vapor Deposition) : Nitride, Poly-Silicon, Amorphous Silicon ¾ç¸é ÁõÂø
- PECVD (Plasma Enhanced Chemical Vapor Deposition) : Nitride, TEOS(Tetraethyl Orthosilicate), ACL(Amorphous Carbon Layer) ´Ü¸é ÁõÂø
- Metal Sputtering : Al, Cu, Ti ÁõÂø
¡Ü SK½ÇÆ®·Ð
|
|
|
|
|
|
|
|
|
|
|
Silicon Wafer , P -Type, 1-0-0 (Orientation) |
Cat. No |
Model |
Description |
Unit |
Price(VATº°µµ) |
³³±â |
ºñ°í |
W04-171-801 |
SW8P008P |
 Silicon Wafer 8inch / P-type 4~12 / SSP |
25/PK |
¼ÒºñÀÚ°¡ : 2,819,300¿ø |
7 Day |
|
W04-171-804 |
SW8P010P |
 Silicon Wafer 8inch / P-type 8~12 / SSP |
25/PK |
¼ÒºñÀÚ°¡ : 2,819,300¿ø |
7 Day |
|
W04-171-807 |
SW8P014P |
 Silicon Wafer 8inch / P-type 3~25 / DSP |
25/PK |
¼ÒºñÀÚ°¡ : 2,819,300¿ø |
7 Day |
|
W04-171-810 |
SW8P500TSN |
 Silicon Wafer 8inch / P-type 1~50 / SSP / Notch |
25/PK |
¼ÒºñÀÚ°¡ : 1,762,000¿ø |
7 Day |
|
W04-171-813 |
SW8P500TSF |
 Silicon Wafer 8inch / P-type 1~50 / SSP / Flat |
25/PK |
¼ÒºñÀÚ°¡ : 1,762,000¿ø |
7 Day |
|
W04-171-816 |
SW8P500TDF |
 Silicon Wafer 8inch / P-type 1~50 / DSP / Flat |
25/PK |
¼ÒºñÀÚ°¡ : 2,153,600¿ø |
7 Day |
|
W04-171-819 |
SW12P990F |
 Silicon Wafer 12inch / P-type 1~99 / Fallout Grade / No COA |
25/PK |
¼ÒºñÀÚ°¡ : 2,192,800¿ø |
7 Day |
|
W04-171-822 |
SW12P030T |
 Silicon Wafer 12inch / P-type 1~30 / Test Grade / Particle 120nm 1,000EA |
25/PK |
¼ÒºñÀÚ°¡ : 2,545,200¿ø |
7 Day |
|
W04-171-825 |
SW12P050T12 |
 Silicon Wafer 12inch / P-type 1~50 / Test Grade / Particle 120nm 50EA |
25/PK |
¼ÒºñÀÚ°¡ : 3,641,600¿ø |
7 Day |
|
W04-171-828 |
SW12P050T05 |
 Silicon Wafer 12inch / P-type 1~50 / Test Grade / Particle 50nm 50EA |
25/PK |
¼ÒºñÀÚ°¡ : 4,072,300¿ø |
7 Day |
|
W04-171-831 |
SW12P010P05 |
 Silicon Wafer 12inch / P-type 8~12 / Prime Grade / Particle 50nm 30EA |
25/PK |
¼ÒºñÀÚ°¡ : 4,698,800¿ø |
7 Day |
|
W04-171-834 |
SW12P020P05 |
 Silicon Wafer 12inch / P-type 14~27 / Prime Grade / Particle 50nm 30EA |
25/PK |
¼ÒºñÀÚ°¡ : 4,698,800¿ø |
7 Day |
|
|
Silicon Wafer, , P -Type, 1-0-0 (Orientation), Test Grade |
Cat. No |
Model |
Description |
Unit |
Price(VATº°µµ) |
³³±â |
ºñ°í |
W04-171-851 |
SSW8P500TND01 |
 Silicon Wafer, SiO2 8inch / P-type Notch / 0.1um with Dry (1,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 2,349,400¿ø |
15 Day |
|
W04-171-854 |
SSW8P500TND02 |
 Silicon Wafer, SiO2 8inch / P-type Notch / 0.2um with Dry (2,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 2,427,700¿ø |
15 Day |
|
W04-171-857 |
SSW8P500TND03 |
 Silicon Wafer, SiO2 8inch / P-type Notch / 0.3um with Dry (3,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 2,643,100¿ø |
15 Day |
|
W04-171-860 |
SSW8P500TNW03 |
 Silicon Wafer, SiO2 8inch / P-type Notch / 0.3um with Wet (3,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 2,192,800¿ø |
15 Day |
|
W04-171-863 |
SSW8P500TNW05 |
 Silicon Wafer, SiO2 8inch / P-type Notch / 0.5um with Wet (5,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 2,310,200¿ø |
15 Day |
|
W04-171-866 |
SSW8P500TNW10 |
 Silicon Wafer, SiO2 8inch / P-type Notch / 1.0um with Wet (10,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 2,643,100¿ø |
15 Day |
|
W04-171-869 |
SSW8P500TNW15 |
 Silicon Wafer, SiO2 8inch / P-type Notch / 1.5um with Wet (15,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 2,878,000¿ø |
15 Day |
|
W04-171-872 |
SSW8P500TNW20 |
 Silicon Wafer, SiO2 8inch / P-type Notch / 2.0um with Wet (20,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 4,189,800¿ø |
15 Day |
|
W04-171-875 |
SSW8P500TFD01 |
 Silicon Wafer, SiO2 8inch / P-type Flat / 0.1um with Dry (1,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 2,349,400¿ø |
15 Day |
|
W04-171-878 |
SSW8P500TFD02 |
 Silicon Wafer, SiO2 8inch / P-type Flat / 0.2um with Dry (2,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 2,427,700¿ø |
15 Day |
|
W04-171-881 |
SSW8P500TFD03 |
 Silicon Wafer, SiO2 8inch / P-type Flat / 0.3um with Dry (3,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 2,643,100¿ø |
15 Day |
|
W04-171-884 |
SSW8P500TFW03 |
 Silicon Wafer, SiO2 8inch / P-type Flat / 0.3um with Wet (3,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 2,192,800¿ø |
15 Day |
|
W04-171-887 |
SSW8P500TFW05 |
 Silicon Wafer, SiO2 8inch / P-type Flat / 0.5um with Wet (5,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 2,310,200¿ø |
15 Day |
|
W04-171-890 |
SSW8P500TFW10 |
 Silicon Wafer, SiO2 8inch / P-type Flat / 1.0um with Wet (10,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 2,643,100¿ø |
15 Day |
|
W04-171-893 |
SSW8P500TFW15 |
 Silicon Wafer, SiO2 8inch / P-type Flat / 1.5um with Wet (15,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 2,878,000¿ø |
15 Day |
|
W04-171-896 |
SSW8P500TFW20 |
 Silicon Wafer, SiO2 8inch / P-type Flat / 2.0um with Wet (20,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 4,189,800¿ø |
15 Day |
|
W04-171-899 |
SSW12N1000 |
 Silicon Wafer, SiO2 12inch / P-type Notch / 0.1um (1,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 3,328,300¿ø |
15 Day |
|
W04-171-902 |
SSW12N2000 |
 Silicon Wafer, SiO2 12inch / P-type Notch / 0.2um (2,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 3,406,600¿ø |
15 Day |
|
W04-171-905 |
SSW12N3000 |
 Silicon Wafer, SiO2 12inch / P-type Notch / 0.3um (3,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 3,524,100¿ø |
15 Day |
|
W04-171-908 |
SSW12N4000 |
 Silicon Wafer, SiO2 12inch / P-type Notch / 0.4um (4,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 3,641,600¿ø |
15 Day |
|
W04-171-911 |
SSW12N5000 |
 Silicon Wafer, SiO2 12inch / P-type Notch / 0.5um (5,000A) |
25/PK |
¼ÒºñÀÚ°¡ : 3,759,000¿ø |
15 Day |
|
|
|
|
|
|
|
|
¹è¼Û¾È³»
- CJ´ëÇÑÅë¿î, ·ÎÁ¨Åùè, °æµ¿È¹°/Åùè, ¿ë´Þ ȹ°(1Åæ, ´Ù¸¶½º)·Î ¹è¼Û °¡´ÉÇÕ´Ï´Ù.
- °í°´´ÔÀÇ ¿äû¿¡ ÀÇÇÑ ±ä±Þ ¹è¼Û(°í¼Ó¹ö½º ȹ°, Äü¼ºñ½º µî)À¸·Î ÀÎÇÑ ¹°·ùºñ¿ëÀº °í°´´ÔÀÇ ºÎ´ãÀÔ´Ï´Ù.
- Åùè/ȹ° ¹è¼Û °¡´É Ç°¸ñ : °ÇÁ¶±â, Àú¿Â¼øȯ¼öÁ¶, Àü±â·Î µî ÆÄ·¹Æ® Æ÷Àå Á¦Ç°
- Åùè/ȹ° ¹è¼Û ºÒ°¡ Ç°¸ñ : ³ÃÀå°í, Ç׿ÂÇ×½À±â, Èĵå, Ŭ¸°º¥Ä¡ µî ºÎÇÇ°¡ Å©°Å³ª ¹ÙÄû°¡ ´Þ·Á ÀÖ´Â ¸ðµ¨
¹è¼Û ±â°£
- Àç°í°¡ ÀÖ´Â Ç°¸ñ¿¡ ÇÑÇÏ¿© ÀÔ±Ý È®ÀÎ ÈÄ 2ÀÏ À̳»¿¡ ¹ß¼Û µË´Ï´Ù. (ÀÔ±Ý È®ÀÎÀº ´çÀÏ 1½Ã ¸¶°¨µÇ¸ç, 1½Ã ÀÌÈÄ ÀÔ±Ý °ÇÀº ÀÍÀÏ Ã³¸® µË´Ï´Ù.)
- ÅùèÀÇ °æ¿ì ÀϹÝÀûÀ¸·Î ¹ß¼ÛÀϷκÎÅÍ 3~7ÀÏ, µµ¼/»ê°£/¿ÀÁö µî ±³ÅëÀÌ ºÒÆíÇÑ Áö¿ªÀÇ °æ¿ì 4~8ÀÏ(Åä.ÀÏ, °øÈÞÀÏ Á¦¿Ü) Á¤µµ ¼Ò¿äµË´Ï´Ù.
- ºÒ°¡ Ç×·ÂÀÇ »çÀ¯(ÀϽÃÇ°Àý/Á¦Á¶»ç·ÎºÎÅÍÀÇ Á¦Ç° ¼ö±Þ ¹®Á¦/õÀçÁöº¯ µî)·Î ¹è¼ÛÀÌ Áö¿¬ µÉ °æ¿ì °í°´´Ô²² ¿¬¶ôÀ» µå¸®°Ú½À´Ï´Ù.
- ¼öÀÔÇ°¸ñÀÇ °ø±Þ ¹× Àç°í »óÅ´ ÁÖ¹®½ÃÁ¡¿¡ µû¶ó ´Þ¶óÁú ¼ö ÀÖÀ¸¸ç, °ø±ÞÀÌ ¾î·Á¿ï °æ¿ì ÁÖ¹®Á¢¼ö ÈÄ ÁÖ¹®ÀÌ Ãë¼Ò µÉ ¼ö ÀÖ½À´Ï´Ù.
- Àç°í°¡ ¾ø´Â »óÇ°ÀÇ °æ¿ì »óÇ°ÀÌ ÀÔ°í µÈ ÀÌÈÄ ¹ß¼ÛÀÌ °¡´ÉÇϹǷÎ, ¾È³» ¹ÞÀ¸½Å ¹è¼Û±â°£ º¸´Ù ´Ù¼Ò ¿¬ÀåµÉ ¼ö ÀÖ½À´Ï´Ù.
- Á¦Ç° Áغñ °úÁ¤¿¡ Â÷ÁúÀÌ »ý°Ü ´Ê¾îÁú °æ¿ì¿¡´Â °í°´´Ô²² ¿¬¶ôÀ» µå¸®°Ú½À´Ï´Ù.
- ÁÖ¹®ÇϽŠ»óÇ°Àº °áÁ¦ È®ÀÎ ÈÄ ¹ß¼ÛµË´Ï´Ù.
°áÁ¦ ÈÄ ¸ÞÀÏ [ you1tech@naver.com ]À̳ª ÀüÈ [ 031-256-7321~2 ]À¸·Î ¿¬¶ô ÁÖ½Ã¸é ´õ¿í »¡¸® ó¸® ÇØ µå¸®°Ú½À´Ï´Ù.
¹è¼Û Áö¿ª
- Àü±¹ ¾î´À Áö¿ªÀ̳ª ¹è¼Û °¡´ÉÇÕ´Ï´Ù. (´Ü, Áö¿ª¿¡ µû¶ó¼ ¹è¼Û±â°£¿¡ ´Ù¼Ò Â÷ÀÌ°¡ ÀÖÀ» ¼ö ÀÖ½À´Ï´Ù.)
¹è¼Û ¿îÀÓ
- ÁÖ¹® ±Ý¾× ±âÁØ (ºÎ°¡¼¼ º°µµ) ÃÑ¾× 5¸¸¿ø ÀÌ»ó ÁÖ¹®½Ã¿¡´Â ¹«·á·Î ¹è¼ÛÇØ µå¸³´Ï´Ù. (Åùè±âÁØ)
- ´Ü, 5¸¸¿ø ¹Ì¸¸ ÁÖ¹® ½Ã ÂøºÒ ¹ß¼ÛµÇ¸ç, ¿äû¿¡ µû¶ó ÁÖ¹®ÀÚ »çÀü °áÁ¦·Î ¼±ºÒ ¹è¼Û °¡´ÉÇÕ´Ï´Ù.
¹è¼Û È®ÀÎ ¹æ¹ý
My PageÀÇ ÁÖ¹®/¹è¼Û ³»¿ª¿¡¼ È®ÀÎ °¡´ÉÇÕ´Ï´Ù.
|
|
|
|
±³È¯ ¹× ¹ÝÇ° ¾È³»
»óÇ°¿¡ ÇÏÀÚ°¡ Àְųª ÁÖ¹®ÇÑ »óÇ°°ú ´Ù¸¦ °æ¿ì, ¼ö·ÉÀϷκÎÅÍ 15ÀÏ À̳»ÀÎ °æ¿ì¿¡ ÇÑÇÏ¿© 1:1 »óÇ°±³È¯ ¶Ç´Â Àü¾× ȯºÒ Á¶Ä¡ Çص帮¸ç,
ÀÌ¿¡ ¼Ò¿äµÇ´Â ¸ðµç ºñ¿ë ¶ÇÇÑ (ÁÖ)À¯¿øÅ×Å©¿¡¼ ºÎ´ãÇÕ´Ï´Ù.
Á¦Ç°¿¡ ÇÏÀÚ´Â ¾øÁö¸¸, ´Ù¸¥ »óÇ°À¸·Î ±³È¯Çϰųª ¹ÝÇ°ÇÏ°íÀÚ ÇÒ °æ¿ì, Ãâ°íÀÏ ±âÁØ ¿µ¾÷ÀÏ 7ÀÏ À̳», À¯¸® ÃÊÀÚ Á¦Ç°Àº 3ÀÏÀ̳»¿¡ ¹ÝÇ°ÇÏ¼Å¾ß Çϸç
»ç¿ëÇÏÁö ¾ÊÀº »õ Á¦Ç°ÀÎ °æ¿ì¿¡ ÇÑÇÏ¿© Á¶Ä¡ÇØ µå¸³´Ï´Ù.
ÀÌ¿¡ ¼Ò¿äµÇ´Â ºñ¿ëÀº °í°´´Ô ºÎ´ãÀÔ´Ï´Ù. (Á¦Ç° »ç¿ë ÈÄ º¯½É¿¡ ÀÇÇÑ ±³È¯ ¹× ȯºÒÀº ºÒ°¡)
Á¦Ç°ÀÇ ±³È¯ ¹× ¹ÝÇ° ½Ã¿¡´Â »óÇ° ºñ´Ò ¹× ¹Ú½º(Brand Box)¸¦ ¼ö·ÉÇϽŠ»óÅ ±×´ë·Î º¸Á¸ÇÏ°í ÀÖÀ» °æ¿ì¿¡¸¸ °¡´ÉÇÕ´Ï´Ù.
±³È¯ ¹× ¹ÝÇ° ÅÃ¹è º¸³»½Ç ¶§ »óÇ° ¹Ú½º(Brand Box)°¡ ¼Õ»óµÇÁö ¾Êµµ·Ï ¹Ýµå½Ã ¿ÜºÎ¿¡ ¹Ú½º ÇÑ °ã ´õ Æ÷Àå ºÎŹµå¸³´Ï´Ù.
* °ÇÀüÁö°¡ Æ÷ÇÔµÈ Á¦Ç°ÀÇ °æ¿ì ¼öÀÔ ¹× À¯Åë °úÁ¤¿¡¼ °ÇÀüÁöÀÇ Àü¾Ð ÀúÇÏ ¹× ¹æÀüÀÇ °æ¿ì°¡ ÀÖÀ» ¼ö ÀÖ½À´Ï´Ù.
ÀÌ·² °æ¿ì ¿µ¾÷ ´ã´çÀÚ¿¡°Ô ¿¬¶ô ÁÖ½Ã¸é ½Å¼ÓÇÏ°Ô Ã³¸®ÇØ µå¸®µµ·Ï ÇÏ°Ú½À´Ï´Ù.
±³È¯ ¹× ¹ÝÇ°, ȯºÒÀÌ ºÒ°¡´É ÇÑ °æ¿ì
1. ÀÌ¿ëÀÚ¿¡°Ô Ã¥ÀÓÀÌ ÀÖ´Â »çÀ¯·Î Á¦Ç°ÀÌ ÈÑ¼ÕµÈ °æ¿ì
2. ÀÌ¿ëÀÚÀÇ »ç¿ë ¶Ç´Â ÀϺΠ¼Òºñ¿¡ ÀÇÇÏ¿© ÀçÈ µîÀÇ °¡Ä¡°¡ ÇöÀúÈ÷ °¨¼ÒÇÑ °æ¿ì
3. Á¦Ç°ÀÇ Æ÷Àå(ºñ´Ò ¹× »óÇ°¹Ú½º)À» ÈÑ¼Õ ÇÑ °æ¿ì
4. ÁÖ¹® ´ç½Ã Àç°í°¡ ¾ø¾î¼ ±¹³» / ÇØ¿Ü Á¶´Þ ºÐ Áß ¼öÀÔ ¹ßÁÖ µÇ¾îÁø »óÇ°
* Àç°í »óÇ°ÀÌ ¾Æ´Ñ °æ¿ì, ¼öÀÔ ¹ßÁÖ µÇ¾îÁø »óÇ°ÀÇ ÁÖ¹® Ãë¼Òµµ ºÒ°¡
ȯºÒ ¾È³»
Çö±Ý °áÁ¦ÀÇ °æ¿ì ±¸¸ÅÀÚÀÇ À̸§(¶Ç´Â ȸ»ç¸í)À¸·Î °³¼³µÈ ÀºÇà°èÁ·Π¼Û±ÝµÇ¸ç, Ä«µå °áÁ¦ÀÇ °æ¿ì Ä«µå ½ÂÀÎ Ãë¼Ò·Î Á¶Ä¡ ÇØ µå¸³´Ï´Ù.
|
|
|
|
|
|
|